View 5SHX10H6010_1574749.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

abb switzerland ltd, semiconductors reserves the right to change specifications without notice. v drm = 5500 v i tgqm = 900 a i tsm = 7.510 3 a v (t0) = 1.65 v r t = 2 m w v dc-link = 3300 v reverse conducting integrated gate-commutated thyristor 5shx 10h6010 preliminary doc. no. 5sya1226-05 aug 07 high snubberless turn-off rating optimized for medium frequency (<1 khz) and low turn-off losses high reliability high electromagnetic immunity simple control interface with status feedback ac or dc supply voltage suitable for series connection (contact factory) blocking maximum rated values note 1 parameter symbol conditions min typ max unit repetitive peak off-state voltage v drm gate unit energized 5500 v permanent dc voltage for 100 fit failure rate of rc-gct v dc-link ambient cosmic radiation at sea level in open air. gate unit energized 3300 v characteristic values parameter symbol conditions min typ max unit repetitive peak off-state current i drm v d = v drm , gate unit energized 20 ma mechanical data (see fig. 20, 21) maximum rated values note 1 parameter symbol conditions min typ max unit mounting force f m 18 20 22 kn characteristic values parameter symbol conditions min typ max unit pole-piece diameter d p 0.1 mm 63 mm housing thickness h 26.0 26.5 mm weight m 1.7 kg surface creepage distance d s anode to gate 33 mm air strike distance d a anode to gate 13 mm length l 1.0 mm 296 mm height h 1.0 mm 48 mm width igct w 1.0 mm 208 mm note 1 maximum rated values indicate limits beyond which damage to the device may occur
5shx 10h6010 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1226-05 aug 07 page 2 of 13 gct data on-state (see fig. 3 to 6, 23) maximum rated values note 1 parameter symbol conditions min typ max unit max. average on-state current i t(av)m half sine wave, t c = 85 c, double side cooled 350 a max. rms on-state current i t(rms) 560 a max. peak non-repetitive surge on-state current i tsm 7.510 3 a limiting load integral i 2 t t p = 10 ms, t j = 115 c, sine wave after surge: v d = v r = 0 v 28110 3 a 2 s max. peak non-repetitive surge on-state current i tsm 1510 3 a limiting load integral i 2 t t p = 1 ms, t j = 115 c, sine wave after surge: v d = v r = 0 v 11210 3 a 2 s critical rate of rise of on- state current di t /dt cr for higher di t /dt and current lower than 50 a an external retrigger pulse is required. tbd a/s characteristic values parameter symbol conditions min typ max unit on-state voltage v t i t = 900 a, t j = 115 c 3.45 v threshold voltage v (t0) 1.65 v slope resistance r t t j = 115 c i t = 200...2000 a 2 m w turn-on switching (see fig. 23, 25) maximum rated values note 1 parameter symbol conditions min typ max unit critical rate of rise of on- state current di t /dt cr f = 500 hz, t j = 115 c, i t = 900 a, v d = 3300 v 285 a/s characteristic values parameter symbol conditions min typ max unit turn-on delay time t don 3 s turn-on delay time status feedback t don sf 7 s rise time t r 1 s turn-on energy per pulse e on v d = 3300 v, t j = 115 c i t = 900 a, di/dt = v d / l i l i = 11.5 h c cl = 2 f, l cl = 0.6 h 0.5 j turn-off switching (see fig. 7, 8, 23, 25) maximum rated values note 1 parameter symbol conditions min typ max unit max. controllable turn-off current i tgqm v dm v drm, t j = 115 c, v d = 3300 v, r s = 1.25 w , c cl = 2 f, l cl 0.6 h 900 a max. controllable turn-off current i tgqm v dm v drm, t j = 115 c, v d = 3900 v, r s = 1.25 w , c cl = 2 f, l cl 0.6 h 460 a characteristic values parameter symbol conditions min typ max unit turn-off delay time t doff 6 s turn-off delay time status feedback t doff sf 7 s turn-off energy per pulse e off v d = 3300 v, t j = 115 c v dm v drm , r s = 1.25 w i tgq = 900 a, l i = 11.5 h c cl = 2 f, l cl = 0.6 h, 4.8 j
5shx 10h6010 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1226-05 aug 07 page 3 of 13 diode data on-state (see fig. 9 to 12, 24, 25) maximum rated values note 1 parameter symbol conditions min typ max unit max. average on-state current i f(av)m half sine wave, t c = 85 c 170 a max. rms on-state current i f(rms) 260 a max. peak non-repetitive surge current i fsm 7.610 3 a limiting load integral i 2 t t p = 10 ms, t vj = 115c, v r = 0 v 288.810 3 a 2 s max. peak non-repetitive surge current i fsm 17.510 3 a limiting load integral i 2 t t p = 1 ms, t vj = 115c, v r = 0 v 15310 3 a 2 s characteristic values parameter symbol conditions min typ max unit on-state voltage v f i f = 900 a, t vj = 115c 6.4 v threshold voltage v (f0) 2.53 v slope resistance r f t vj = 115c i f = 200...2000 a 4.3 m w turn-on (see fig. 24, 25) characteristic values parameter symbol conditions min typ max unit di f /dt = 350 a/s, t vj = 115c 80 v peak forward recovery voltage v frm di f /dt = 1600 a/s, t vj = 115c 250 v turn-off (see fig. 13 to 17, 24, 25) maximum rated values note 1 parameter symbol conditions min typ max unit max. decay rate of on-state current di/dt crit i fm = 900 a, t vj = 115 c v dclink = 3900 v 285 a/ m s characteristic values parameter symbol conditions min typ max unit reverse recovery current i rm 430 a reverse recovery charge q rr tbd c turn-off energy e rr i fm = 900 a, v dc-link = 3300 v -di f /dt = 285 a/s, l cl = 0.6 h c cl = 2 f, r s = 1.25 w , t vj = 115c, d cl = 5sdf 02d6004 2.6 j
5shx 10h6010 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1226-05 aug 07 page 4 of 13 gate unit data power supply (see fig. 18, 19) maximum rated values note 1 parameter symbol conditions min typ max unit gate unit voltage (connector x1) v gin,rms ac square wave amplitude (15 khz - 100khz) or dc voltage. no galvanic isolation to power circuit. 28 40 v min. current needed to power up the gate unit i gin min rectified average current see application note 5sya 2031 1.1 a gate unit power consumption p gin max 80 w characteristic values parameter symbol conditions min typ max unit internal current limitation i gin max rectified average current limited by the gate unit 7 a optical control input/output 2) (see fig. 23) maximum rated values note 1 parameter symbol conditions min typ max unit min. on-time t on 40 s min. off-time t off 40 s characteristic values parameter symbol conditions min typ max unit optical input power p on cs -15 -1 dbm optical noise power p off cs -45 dbm optical output power p on sf -19 -1 dbm optical noise power p off sf cs: command signal sf: status feedback valid for 1mm plastic optical fiber (pof) -50 dbm pulse width threshold t glitch max. pulse width without response 400 ns external retrigger pulse width t retrig 600 1100 ns 2) do not disconnect or connect fiber optic cables while light is on. connectors 2) (see fig. 20 to 22) parameter symbol description gate unit power connector x1 amp: mta-156, part number 641210-5 3) lwl receiver for command signal cs avago, type hfbr-2528 4) lwl transmitter for status feedback sf avago, type hfbr-1528 4) 2) do not disconnect or connect fiber optic cables while light is on. 3) amp, www.amp.com 4) avago technologies, www.avagotech.com visual feedback (see fig. 22) parameter symbol description color gate off led1 "light" when gct is off (green) gate on led2 "light" when gate-current is flowing (yellow) fault led3 "light" when not ready / failure (red) power supply voltage ok led4 "light" when power supply is within specified range (green)
5shx 10h6010 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1226-05 aug 07 page 5 of 13 thermal maximum rated values note 1 parameter symbol conditions min typ max unit junction operating temperature t vj 0 115 c storage temperature range t stg -40 60 c ambient operational temperature t a 0 60 c characteristic values parameter symbol conditions min typ max unit thermal resistance junction-to-case of gct r th(jc) 25 k/kw thermal resistance case-to- heatsink of gct r th(ch) double side cooled diode not dissipating 8 k/kw thermal resistance junction-to-case of diode r th(jc) 42 k/kw thermal resistance case-to- heatsink of diode r th(ch) double side cooled gct not dissipating 8 k/kw analytical function for transient thermal impedance: gct ) e - (1 r = (t) z n 1 i t/ - i thjc i ? = t i 1 2 3 4 r i (k/kw) 15.295 5.736 2.684 1.289 t i (s) 0.4820 0.0758 0.0076 0.0023 diode i 1 2 3 4 r i (k/kw) 25.199 9.964 4.491 2.347 t i (s) 0.4963 0.0802 0.0076 0.0023 fig. 1 transient thermal impedance (junction-to- case) vs. time (max. values) max. turn-off current for lifetime operation calculated lifetime of on-board capacitors 20 years with slightly forced air cooling (air velocity > 0.5 m/s) strong air cooling allows for increased ambient temperature fig. 2 max. turn-off current vs. frequency for lifetime operation
5shx 10h6010 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1226-05 aug 07 page 6 of 13 gct part max. on-state characteristic model: v t25 t tvj t tvj t tvj tvj i d i c i b a + + + + = ) 1 ln( valid for i t = tbd ? tbd a max. on-state characteristic model: v t115 t tvj t tvj t tvj tvj i d i c i b a + + + + = ) 1 ln( valid for i t = tbd ? tbd a a 25 b 25 c 25 d 25 a 115 b 115 c 115 d 115 tbd tbd tbd tbd tbd tbd tbd tbd 2.002.252.502.753.003.253.503.754.00 v t [v] 0 200 400 600 800 1000 i t [a] t j = 115c fig. 3 gct on-state voltage characteristics fig. 4 gct on-state voltage characteristics tbd tbd fig. 5 gct surge on-state current vs. pulse length, half-sine wave fig. 6 gct surge on-state current vs. number of pulses, half-sine wave, 10 ms, 50hz
5shx 10h6010 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1226-05 aug 07 page 7 of 13 0 1002003004005006007008009001000 i tgq [a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 e off [j] t j = 115c v d = 3300 v fig. 7 gct turn-off energy per pulse vs. turn-off current fig. 8 gct safe operating area
5shx 10h6010 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1226-05 aug 07 page 8 of 13 diode part max. on-state characteristic model: v f25 t tvj t tvj t tvj tvj i d i c i b a + + + + = ) 1 ln( valid for i f = tbd ? tbd a max. on-state characteristic model: v f 115 t tvj t tvj t tvj tvj i d i c i b a + + + + = ) 1 ln( valid for i t = tbd ? tbd a a 25 b 25 c 25 d 25 a 115 b 115 c 115 d 115 tbd tbd tbd tbd tbd tbd tbd tbd 0 200 400 600 800 1000 3.0 4.0 5.0 6.0 7.0 v f [v] i f [a] tj = 115c fig. 9 diode on-state voltage characteristics fig. 10 diode on-state voltage characteristics tbd tbd fig. 11 diode surge on-state current vs. pulse length, half-sine wave fig. 12 diode surge on-state current vs. number of pulses, half-sine wave, 10 ms, 50hz
5shx 10h6010 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1226-05 aug 07 page 9 of 13 0 1002003004005006007008009001000 i fq [a] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 e rr [j] t j = 115c di f /dt = 290 a/s v d = 3300 v tbd fig. 13 upper scatter range of diode turn-off energy per pulse vs. turn-off current fig. 14 upper scatter range of diode turn-off energy per pulse vs decay rate of on-state current tbd 0 1002003004005006007008009001000 i fq [a] 200 250 300 350 400 450 500 i rr [a] t j = 115c di f /dt = 290 a/s v d = 3300 v fig. 15 upper scatter range of diode reverse recovery charge vs decay rate of on-state current fig. 16 upper scatter range of diode reverse recovery current vs decay rate of on-state current
5shx 10h6010 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1226-05 aug 07 page 10 of 13 tbd fig. 17 diode safe operating area fig. 18 max. gate unit input power in chopper mode tbd fig. 19 burst capability of gate unit
5shx 10h6010 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1226-05 aug 07 page 11 of 13 fig. 20 outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise 1) v gin (ac or dc+) 2) v gin (ac or dc+) 3) cathode 4) v gin (ac or dc-) 5) v gin (ac or dc-) fig. 21 detail a: pin out of supply connector x1. logic monitoring turn- off circuit turn- on circuit gate cathode internal supply (no galvanic isolation to power circuit) supply (v gin ) x1 cs led1 led2 led3 led4 rx command signal (light) tx status feedback (light) anode sf rc-igct gate unit rc-gct fig. 22 block diagram
5shx 10h6010 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1226-05 aug 07 page 12 of 13 i t v dsp v dm v d 0.4 i tgq turn-off t doff cs sf t doff sf cs t r i t i tm di t /dt 0.9 v d 0.1 v d v d turn-on t don sf t don sf external retrigger pulse cs t retrig sf v d t on t off fig. 23 general current and voltage waveforms with igct-specific symbols v fr di f /dt i f (t) i f (t) v f (t) t fr t fr (typ) 10 s q rr i rm -di f /dt v f (t), i f (t) v f (t) v r (t) t fig. 24 general current and voltage waveforms with diode-specific symbols
5shx 10h6010 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. abb switzerland ltd doc. no. 5sya1226-05 aug 07 semiconductors fabrikstrasse 3 ch-5600 lenzburg, switzerland telephone +41 (0)58 586 1419 fax +41 (0)58 586 1306 email abbsem@ch.abb.com internet www.abb.com/semiconductors l cl l i r s dut gct - part l load dut diode - part c cl v dc d cl fig. 25 test circuit related documents: 5sya 2031 applying igct gate units 5sya 2032 applying igcts 5sya 2036 recommendations regarding mechanical clamping of press pack high power semiconductors 5sya 2046 failure rates of igcts due to cosmic rays 5sya 2048 field measurements on high power press pack semiconductors 5sya 2051 voltage ratings of high power semiconductors 5szk 9107 specification of enviromental class for pressure contact igcts, operation available on request, please contact factory please refer to http://www.abb.com/semiconductors for current version of documents.

▲Up To Search▲

Price & Availability of 5SHX10H6010

	To Download 5SHX10H6010 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .